cells
are temporary capacitors added in the design between power and ground
rails to counter functional failures due to dynamic IR drop.Dynamic I.R.
drop happens at the active edge of the clock at which a high percentage
of Sequential and Digital elements switch.Due to this simultaneous
switching a high current is drawn from the power grid for a small
duration.If the power source is far away from a flop the chances are
that this flop can go into a metastable state due to IR Drop.To overcome
this decaps are added. At an active edge of clock when the current
requirement is high , these decaps discharge and provide boost to the
power grid. One caveat in usage of decaps is that these add to leakage
current. De caps are placed as fillers. The closer they are to the
flop’s sequential elements, the better it is.
Decap
cells are typically poly gate transistors where source and drain are
connected to the ground rail, and the gate is connected to the power
rail. when
there is an instantaneous switching activity the charge required moves
from intrinsic and extrinsic local charge reservoirs as oppose to
voltage sources. Extrinsic capacitances are decap cells placed in the
design. Intrinsic capacitances
are those present naturally in the circuit, such as the grid
capacitance, the variable capacitance inside nearby logic, and the
neighborhood loading capacitance exposed when the P or N channel are
open.One
drawback of decap cells is that they are very leaky, so the more decap
cells the more leakage. Another drawback, which many designers
ignore, is the interaction of the decap cells with the package RLC
network. Since the die is essentially a capacitor with very small R and
L, and the package is a hug RL network, the more decap cells placed the
more chance of tuning the circuit into its resonance frequency. That
would be trouble, since both VDD and GND will be oscillating. I have
seen designs fail because of thisDesigners
typically place decap cells near high activity clock buffers, but I
recommend a decap optimization flow where tools study charge
requirements at every moment in time and figure out how much decap to
place at any node. This should be done while taking package models into
account to ensure resonance frequency is not hit.
If gate poly is directly connected to vdd, then gate will damage , isn't it?
ReplyDeleteNo, remember that pmos dummy gates are all connected to VDD to keep them permanently off(since its a dummy).
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