Electromigration is a phenomenon, it can lead to opens and shorts due to metal ion displacement caused by the flow of electrons in metal, which can lead to functional failure of IC device. Reason for Electromigration is increase in current densities in net, which often occurs when strong cell drives thinner net in CTN (Clock Tree Network) or in design.
To prevent this problem use the associate reference cell (a buffer or inverter inserted in CTS stage) with non default rules
Increasing the Width of Wire
Routing the net in higher metal layer
Up sizing of drivers can also be one the probable solution
How to Prevent Electro Migration Issue
To prevent this problem use the associate reference cell (a buffer or inverter inserted in CTS stage) with non default rules
Increasing the Width of Wire
Routing the net in higher metal layer
Up sizing of drivers can also be one the probable solution
as i know the current densities increase on wire of less cross sectional area, over the time.
ReplyDeleteYou mentioned here, that when strong cell drives thick net, electromigration increase...
EM increasing on thick net or thin net...?
please clarify my doubt...?
Yes u r correct, electromigration effect comes to play during high density current with lesser cross sectional area wire which can cause wire widening and that may lead to short and open of wire. Hope it will clear ur doubt
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DeleteAkshay upsizing the driver leads more current to flow through the segment resulting the segment violating with higher magnitude of violation. One solution is to downsize other solution is inserting buffer to minimise the load.
ReplyDeletethank you sir for your suggestion, surely i will include this point too
DeletePlease add associated diagrams to the every concept while describing ...
ReplyDeletewhich gives the better idea to the reader.
is it possible for wire widening due to em?
ReplyDelete